IRG4PH40UD2-EP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Mount :

Through Hole

Max Power Dissipation :

160W

Mounting Type :

Through Hole

Voltage - Rated DC :

1.2kV

Collector Emitter Saturation Voltage :

2.43V

Lead Free :

Lead Free

Turn Off Time-Nom (toff) :

600 ns

Gate Charge :

100nC

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

3.1V @ 15V, 21A

Transistor Application :

POWER CONTROL

Turn-Off Delay Time :

97 s

Number of Elements :

1

Current - Collector Pulsed (Icm) :

82A

Gate-Emitter Thr Voltage-Max :

6V

Td (on/off) @ 25°C :

22ns/100ns

Published :

2004

Rise Time :

26ns

Turn On Delay Time :

46 ns

Reverse Recovery Time :

50 ns

Transistor Element Material :

SILICON

Number of Pins :

3

Current Rating :

41A

Gate-Emitter Voltage-Max :

20V

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

3.1V

Weight :

38.000013g

Factory Lead Time :

14 Weeks

Switching Energy :

1.95mJ (on), 1.71mJ (off)

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

1.2kV

Voltage - Collector Emitter Breakdown (Max) :

1200V

Radiation Hardening :

No

Max Collector Current :

41A

Package / Case :

TO-247-3

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-247AD

Turn On Time :

46 ns

Test Condition :

800V, 21A, 10 Ω, 15V

Input Type :

Standard