IRG4PF50WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Mount :

Through Hole

Number of Pins :

3

Max Collector Current :

51A

Test Condition :

720V, 28A, 5 Ω, 15V

Transistor Element Material :

SILICON

Number of Terminations :

3

ECCN Code :

EAR99

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 28A

Width :

5.3mm

Length :

15.875mm

Current Rating :

51A

Gate-Emitter Thr Voltage-Max :

6V

Gate Charge :

160nC

Td (on/off) @ 25°C :

29ns/110ns

Turn On Time :

54 ns

Radiation Hardening :

No

Turn Off Time-Nom (toff) :

370 ns

Switching Energy :

190μJ (on), 1.06mJ (off)

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-247AC

Collector Emitter Voltage (VCEO) :

2.7V

Packaging :

Tube

Voltage - Rated DC :

600V

Termination :

Through Hole

Number of Elements :

1

Case Connection :

COLLECTOR

REACH SVHC :

No SVHC

Transistor Application :

POWER CONTROL

Collector Emitter Breakdown Voltage :

900V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Terminal Position :

Single

Weight :

38.000013g

Published :

2004

Gate-Emitter Voltage-Max :

20V

Rise Time :

26ns

Turn-Off Delay Time :

110 ns

Current - Collector Pulsed (Icm) :

204A

Height :

20.3mm

Power Dissipation :

200W

Fall Time-Max (tf) :

220ns

Turn On Delay Time :

29 ns

Input Type :

Standard

Max Power Dissipation :

200W

Factory Lead Time :

14 Weeks

Additional Feature :

LOW CONDUCTION LOSS

Element Configuration :

Dual

Collector Emitter Saturation Voltage :

2.25V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant