IRG4PF50WPBF
- Mfr.Part #
- IRG4PF50WPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT, 51A I(C), 900V V(BR)CES, N
- Stock
- 4,858
- In Stock :
- 4,858
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Voltage (VCEO) :
- 2.7V
- Package / Case :
- TO-247-3
- Td (on/off) @ 25°C :
- 29ns/110ns
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Current - Collector Pulsed (Icm) :
- 204A
- Current Rating :
- 51A
- Height :
- 20.3mm
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 28A
- Length :
- 15.875mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Switching Energy :
- 190μJ (on), 1.06mJ (off)
- Turn-Off Delay Time :
- 110 ns
- Gate-Emitter Thr Voltage-Max :
- 6V
- Rise Time :
- 26ns
- Turn On Time :
- 54 ns
- Published :
- 2004
- Factory Lead Time :
- 14 Weeks
- Element Configuration :
- Dual
- Turn On Delay Time :
- 29 ns
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Gate-Emitter Voltage-Max :
- 20V
- Number of Elements :
- 1
- Max Power Dissipation :
- 200W
- Voltage - Rated DC :
- 600V
- Mount :
- Through Hole
- Weight :
- 38.000013g
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Termination :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 900V
- Turn Off Time-Nom (toff) :
- 370 ns
- Width :
- 5.3mm
- Collector Emitter Saturation Voltage :
- 2.25V
- JEDEC-95 Code :
- TO-247AC
- Power Dissipation :
- 200W
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Fall Time-Max (tf) :
- 220ns
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- POWER CONTROL
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge :
- 160nC
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Test Condition :
- 720V, 28A, 5 Ω, 15V
- Max Collector Current :
- 51A
- Additional Feature :
- LOW CONDUCTION LOSS
- Datasheets
- IRG4PF50WPBF

IRG4PF50WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PF50WPBF Description
IRG4PF50WPBF belongs to the family of IGBTs that are manufactured by Infineon Technologies to minimize switching losses and conduction losses. It is optimized for use in welding and switch-mode power supply applications. It is able to deliver lower conduction and switching losses, tighter parameter distribution, and exceptional reliability. Minimal minority-carrier recombination and low on-state losses are used to achieve maximum flexibility in device application.
IRG4PF50WPBF Features
-
Tighter parameter distribution
-
Higher efficiency
-
Low conduction losses
-
High switching speed
-
Available in the TO-247AC package
IRG4PF50WPBF Applications
-
Rail transit
-
Smart grid
-
Aerospace
-
Electric vehicles
-
New energy equipment
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