IRG4PC40FDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Power Dissipation :

160W

Gate-Emitter Thr Voltage-Max :

6V

ECCN Code :

EAR99

Voltage - Rated DC :

600V

Turn-Off Delay Time :

230 ns

Test Condition :

480V, 27A, 10 Ω, 15V

Case Connection :

COLLECTOR

Max Power Dissipation :

160W

Collector Emitter Breakdown Voltage :

600V

Switching Energy :

950μJ (on), 2.01mJ (off)

Turn Off Time-Nom (toff) :

660 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

20.2946mm

Element Configuration :

Single

Radiation Hardening :

No

Package / Case :

TO-247-3

Mount :

Through Hole

Number of Elements :

1

Turn On Time :

96 ns

JEDEC-95 Code :

TO-247AC

Length :

15.875mm

Lead Free :

Lead Free

Mounting Type :

Through Hole

Number of Terminations :

3

Td (on/off) @ 25°C :

63ns/230ns

Transistor Application :

POWER CONTROL

Input Type :

Standard

Collector Emitter Saturation Voltage :

1.7V

Width :

5.3mm

REACH SVHC :

No SVHC

Number of Pins :

3

Transistor Element Material :

SILICON

Packaging :

Tube

Current - Collector Pulsed (Icm) :

196A

Factory Lead Time :

14 Weeks

Current Rating :

49A

Polarity/Channel Type :

N-Channel

Termination :

Through Hole

Gate-Emitter Voltage-Max :

20V

Max Collector Current :

49A

RoHS Status :

ROHS3 Compliant

Rise Time :

32ns

Turn On Delay Time :

63 ns

Weight :

38.000013g

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 27A

Reverse Recovery Time :

42 ns

Operating Temperature :

-55°C~150°C TJ

Gate Charge :

100nC

Collector Emitter Voltage (VCEO) :

1.7V

Published :

1998