IRG4IBC10UD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Transistor Element Material :

SILICON

Switching Energy :

140μJ (on), 120μJ (off)

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 5A

Terminal Position :

Single

Turn On Time :

56 ns

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

600V

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

27A

Additional Feature :

ULTRA FAST

Input Type :

Standard

Number of Elements :

1

Surface Mount :

No

Qualification Status :

Not Qualified

Test Condition :

480V, 5A, 100 Ω, 15V

Operating Temperature :

-55°C~150°C TJ

Current - Collector (Ic) (Max) :

6.8A

Mounting Type :

Through Hole

Reverse Recovery Time :

28ns

Power - Max :

25W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn Off Time-Nom (toff) :

345 ns

Td (on/off) @ 25°C :

40ns/87ns

Published :

1999

JESD-30 Code :

R-PSFM-T3

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge :

15nC

Packaging :

Tube

Transistor Application :

POWER CONTROL