IRG4BC40W-LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

REACH SVHC :

No SVHC

Current - Collector Pulsed (Icm) :

160A

Factory Lead Time :

9 Weeks

Terminal Position :

Single

Additional Feature :

LOW CONDUCTION LOSS

Max Collector Current :

40A

Turn On Time :

48 ns

Time@Peak Reflow Temperature-Max (s) :

30

Switching Energy :

110μJ (on), 230μJ (off)

Td (on/off) @ 25°C :

27ns/100ns

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

2.36V

Length :

10.668mm

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

Weight :

2.084002g

JESD-609 Code :

e3

Number of Pins :

3

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Voltage-Max :

20V

Power Dissipation :

160W

Gate-Emitter Thr Voltage-Max :

6V

Transistor Application :

POWER CONTROL

Element Configuration :

Dual

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Height :

9.652mm

Test Condition :

480V, 20A, 10 Ω, 15V

Rise Time :

22ns

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

40A

Number of Elements :

1

Number of Terminations :

3

Published :

2010

RoHS Status :

ROHS3 Compliant

Width :

4.826mm

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Voltage - Rated DC :

600V

Max Power Dissipation :

160W

Turn Off Time-Nom (toff) :

294 ns

Mounting Type :

Through Hole

Radiation Hardening :

No

Fall Time-Max (tf) :

110ns

Gate Charge :

98nC

Collector Emitter Voltage (VCEO) :

2.5V

Packaging :

Tube

Input Type :

Standard