IRG4BC30UPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

160μJ (on), 200μJ (off)

RoHS Status :

ROHS3 Compliant

Turn On Time :

33 ns

Radiation Hardening :

No

Gate Charge :

50nC

REACH SVHC :

No SVHC

Element Configuration :

Single

Factory Lead Time :

16 Weeks

Polarity/Channel Type :

N-Channel

Input Capacitance :

1.1nF

Gate-Emitter Thr Voltage-Max :

6V

Additional Feature :

ULTRA FAST SWITCHING

Package / Case :

TO-220-3

Published :

2000

Current Rating :

23A

Rise Time :

9.6ns

Width :

4.826mm

Voltage - Rated DC :

600V

Gate-Emitter Voltage-Max :

20V

Height :

16.51mm

Length :

10.668mm

Td (on/off) @ 25°C :

17ns/78ns

Collector Emitter Saturation Voltage :

2.1V

Collector Emitter Breakdown Voltage :

600V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

100W

Current - Collector Pulsed (Icm) :

92A

Collector Emitter Voltage (VCEO) :

2.1V

Lead Free :

Contains Lead, Lead Free

Termination :

Through Hole

Transistor Element Material :

SILICON

Number of Elements :

1

Power Dissipation :

100W

Input Type :

Standard

Max Collector Current :

23A

Fall Time-Max (tf) :

150ns

Turn On Delay Time :

17 ns

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 12A

Mount :

Through Hole

Test Condition :

480V, 12A, 23 Ω, 15V

Case Connection :

COLLECTOR

Number of Pins :

3

Turn-Off Delay Time :

78 ns

Transistor Application :

POWER CONTROL

JEDEC-95 Code :

TO-220AB

Turn Off Time-Nom (toff) :

320 ns

Number of Terminations :

3

ECCN Code :

EAR99

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ