IRG4BC30SPBF
- Mfr.Part #
- IRG4BC30SPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT, 34A I(C), 600V V(BR)CES, N
- Stock
- 53,717
- In Stock :
- 53,717
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Breakdown Voltage :
- 600V
- Package / Case :
- TO-220-3
- Published :
- 2000
- Lead Free :
- Lead Free
- Termination :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 1.4V
- Mounting Type :
- Through Hole
- Current - Collector Pulsed (Icm) :
- 68A
- Polarity/Channel Type :
- N-Channel
- Turn On Time :
- 40 ns
- Height :
- 15.24mm
- Turn-Off Delay Time :
- 540 ns
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Width :
- 4.69mm
- Power Dissipation :
- 100W
- Vce(on) (Max) @ Vge, Ic :
- 1.6V @ 15V, 18A
- Transistor Application :
- POWER CONTROL
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 16 Weeks
- Peak Reflow Temperature (Cel) :
- 250
- Input Type :
- Standard
- Fall Time-Max (tf) :
- 590ns
- Test Condition :
- 480V, 18A, 23 Ω, 15V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Max Power Dissipation :
- 100W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge :
- 50nC
- Voltage - Rated DC :
- 600V
- Td (on/off) @ 25°C :
- 22ns/540ns
- Gate-Emitter Voltage-Max :
- 20V
- Switching Energy :
- 260μJ (on), 3.45mJ (off)
- Turn On Delay Time :
- 22 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Rise Time :
- 18ns
- Gate-Emitter Thr Voltage-Max :
- 6V
- Max Collector Current :
- 34A
- Packaging :
- Tube
- Turn Off Time-Nom (toff) :
- 1550 ns
- Number of Pins :
- 3
- Element Configuration :
- Dual
- Radiation Hardening :
- No
- Current Rating :
- 34A
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Length :
- 10.54mm
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Case Connection :
- COLLECTOR
- Datasheets
- IRG4BC30SPBF

IRG4BC30SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC30SPBF Description
The IRG4BC30SPBF is an Insulated Gate Bipolar Transistor optimized for minimum saturation voltage and low operating frequencies (<1kHz). The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
IRG4BC30SPBF Features
-
Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
-
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
-
Industry standard TO-220AB package
-
IGBTs optimized for specified application conditions
-
ROHS3 Compliant
-
Lead-Free
-
No SVHC
IRG4BC30SPBF Applications
-
HVAC
-
Consumer Electronics
-
Power Management
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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