IRG4BC30SPBF

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Mfr.Part #
IRG4BC30SPBF
Manufacturer
International Rectifier
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT, 34A I(C), 600V V(BR)CES, N
Stock
53,717
In Stock :
53,717

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Collector Emitter Breakdown Voltage :
600V
Package / Case :
TO-220-3
Published :
2000
Lead Free :
Lead Free
Termination :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Saturation Voltage :
1.4V
Mounting Type :
Through Hole
Current - Collector Pulsed (Icm) :
68A
Polarity/Channel Type :
N-Channel
Turn On Time :
40 ns
Height :
15.24mm
Turn-Off Delay Time :
540 ns
Terminal Position :
Single
ECCN Code :
EAR99
Number of Terminations :
3
Width :
4.69mm
Power Dissipation :
100W
Vce(on) (Max) @ Vge, Ic :
1.6V @ 15V, 18A
Transistor Application :
POWER CONTROL
JESD-609 Code :
e3
REACH SVHC :
No SVHC
Factory Lead Time :
16 Weeks
Peak Reflow Temperature (Cel) :
250
Input Type :
Standard
Fall Time-Max (tf) :
590ns
Test Condition :
480V, 18A, 23 Ω, 15V
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation :
100W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge :
50nC
Voltage - Rated DC :
600V
Td (on/off) @ 25°C :
22ns/540ns
Gate-Emitter Voltage-Max :
20V
Switching Energy :
260μJ (on), 3.45mJ (off)
Turn On Delay Time :
22 ns
Time@Peak Reflow Temperature-Max (s) :
30
Rise Time :
18ns
Gate-Emitter Thr Voltage-Max :
6V
Max Collector Current :
34A
Packaging :
Tube
Turn Off Time-Nom (toff) :
1550 ns
Number of Pins :
3
Element Configuration :
Dual
Radiation Hardening :
No
Current Rating :
34A
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
JEDEC-95 Code :
TO-220AB
Transistor Element Material :
SILICON
Length :
10.54mm
Collector Emitter Voltage (VCEO) :
1.6V
Case Connection :
COLLECTOR
Datasheets
IRG4BC30SPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG4BC30SPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, IRG4BC30SPBF pinout, IRG4BC30SPBF datasheet PDF, IRG4BC30SPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG4BC30SPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRG4BC30SPBF


IRG4BC30SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4BC30SPBF Description


The IRG4BC30SPBF is an Insulated Gate Bipolar Transistor optimized for minimum saturation voltage and low operating frequencies (<1kHz). The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.



IRG4BC30SPBF Features


  • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)

  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

  • Industry standard TO-220AB package

  • IGBTs optimized for specified application conditions

  • ROHS3 Compliant

  • Lead-Free

  • No SVHC



IRG4BC30SPBF Applications


  • HVAC

  • Consumer Electronics

  • Power Management

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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