IRG4BC20W-S

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Mfr.Part #
IRG4BC20W-S
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IGBT 600V 13A 60W D2PAK
Stock
6,267
In Stock :
6,267

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Configuration :
Single
Vce(on) (Max) @ Vge, Ic :
2.6V @ 15V, 6.5A
Packaging :
Tube
Terminal Form :
Gull wing
Case Connection :
COLLECTOR
Terminal Position :
Single
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
30
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
2
JESD-30 Code :
R-PSSO-G2
Current - Collector Pulsed (Icm) :
52A
Power - Max :
60W
Transistor Application :
POWER CONTROL
Input Type :
Standard
Mounting Type :
Surface Mount
Surface Mount :
yes
Turn Off Time-Nom (toff) :
300 ns
Peak Reflow Temperature (Cel) :
225
JESD-609 Code :
e0
Gate Charge :
26nC
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Qualification Status :
Not Qualified
Current - Collector (Ic) (Max) :
13A
Terminal Finish :
Tin/Lead (Sn/Pb)
Test Condition :
480V, 6.5A, 50 Ω, 15V
RoHS Status :
Non-RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) :
600V
Switching Energy :
60μJ (on), 80μJ (off)
Operating Temperature :
-55°C~150°C TJ
Turn On Time :
36 ns
Td (on/off) @ 25°C :
22ns/110ns
Additional Feature :
LOW CONDUCTION LOSS
Published :
2001
Datasheets
IRG4BC20W-S
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4BC20W-S from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, IRG4BC20W-S pinout, IRG4BC20W-S datasheet PDF, IRG4BC20W-S amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4BC20W-S ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4BC20W-S


IRG4BC20W-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4BC20W-S Benefits

Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)

Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)



IRG4BC20W-S  Features

Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)applications

Industry-benchmark switching losses improve the efficiency of all power supply topologies

50% reduction of Eoff parameter

Low IGBT conduction losses

Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Lead-Free


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