IRG4BC20W-S
- Mfr.Part #
- IRG4BC20W-S
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 600V 13A 60W D2PAK
- Stock
- 6,267
- In Stock :
- 6,267
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Configuration :
- Single
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 6.5A
- Packaging :
- Tube
- Terminal Form :
- Gull wing
- Case Connection :
- COLLECTOR
- Terminal Position :
- Single
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Current - Collector Pulsed (Icm) :
- 52A
- Power - Max :
- 60W
- Transistor Application :
- POWER CONTROL
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Turn Off Time-Nom (toff) :
- 300 ns
- Peak Reflow Temperature (Cel) :
- 225
- JESD-609 Code :
- e0
- Gate Charge :
- 26nC
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Qualification Status :
- Not Qualified
- Current - Collector (Ic) (Max) :
- 13A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Test Condition :
- 480V, 6.5A, 50 Ω, 15V
- RoHS Status :
- Non-RoHS Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Switching Energy :
- 60μJ (on), 80μJ (off)
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Time :
- 36 ns
- Td (on/off) @ 25°C :
- 22ns/110ns
- Additional Feature :
- LOW CONDUCTION LOSS
- Published :
- 2001
- Datasheets
- IRG4BC20W-S

IRG4BC20W-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC20W-S Benefits
Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)
IRG4BC20W-S Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)applications
Industry-benchmark switching losses improve the efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
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