IRG4BC20UDSTRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

60W

Gate-Emitter Thr Voltage-Max :

6V

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

Turn Off Time-Nom (toff) :

320 ns

Transistor Application :

POWER CONTROL

Number of Terminations :

2

Number of Elements :

1

Number of Pins :

3

RoHS Status :

RoHS Compliant

Switching Energy :

160μJ (on), 130μJ (off)

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Test Condition :

480V, 6.5A, 50 Ω, 15V

Operating Temperature :

-55°C~150°C TJ

Td (on/off) @ 25°C :

39ns/93ns

Weight :

260.39037mg

Polarity/Channel Type :

N-Channel

Gate Charge :

27nC

Element Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 6.5A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Max Collector Current :

13A

JESD-30 Code :

R-PSSO-G2

Turn On Time :

55 ns

Factory Lead Time :

13 Weeks

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

60W

Gate-Emitter Voltage-Max :

20V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

600V

Input Type :

Standard

Reverse Recovery Time :

37 ns

Fall Time-Max (tf) :

170ns

Collector Emitter Voltage (VCEO) :

2.1V

Mount :

Surface Mount

Radiation Hardening :

No

Published :

2000

Current - Collector Pulsed (Icm) :

52A