IRG4BC20UD-SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate Charge :

27nC

Gate-Emitter Thr Voltage-Max :

6V

Published :

2001

Width :

9.65mm

Number of Pins :

3

Length :

10.668mm

Current Rating :

13A

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Max Collector Current :

13A

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Turn Off Time-Nom (toff) :

320 ns

Reverse Recovery Time :

37 ns

Polarity/Channel Type :

N-Channel

Height :

4.699mm

Power Dissipation :

60W

Collector Emitter Breakdown Voltage :

600V

Input Type :

Standard

ECCN Code :

EAR99

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time-Max (tf) :

170ns

Gate-Emitter Voltage-Max :

20V

Rise Time :

15ns

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Factory Lead Time :

14 Weeks

Voltage - Rated DC :

600V

REACH SVHC :

No SVHC

Max Power Dissipation :

60W

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

2.1V

Td (on/off) @ 25°C :

39ns/93ns

Peak Reflow Temperature (Cel) :

260

Transistor Application :

POWER CONTROL

Element Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 6.5A

Radiation Hardening :

No

Number of Terminations :

2

Test Condition :

480V, 6.5A, 50 Ω, 15V

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Turn On Time :

55 ns

Collector Emitter Voltage (VCEO) :

2.1V

Mounting Type :

Surface Mount

Current - Collector Pulsed (Icm) :

52A

Switching Energy :

160μJ (on), 130μJ (off)