IRG4BC20SPBF

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Mfr.Part #
IRG4BC20SPBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
IRG4BC20 - DISCRETE IGBT WITHOUT
Stock
37,268
In Stock :
37,268

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Turn-Off Delay Time :
540 ns
Mounting Type :
Through Hole
Case Connection :
COLLECTOR
Transistor Application :
POWER CONTROL
Termination :
Through Hole
Current - Collector Pulsed (Icm) :
38A
Factory Lead Time :
16 Weeks
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Published :
2000
Collector Emitter Breakdown Voltage :
600V
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce(on) (Max) @ Vge, Ic :
1.6V @ 15V, 10A
Gate-Emitter Thr Voltage-Max :
6V
REACH SVHC :
No SVHC
Polarity/Channel Type :
N-Channel
Number of Terminations :
3
Turn Off Time-Nom (toff) :
1540 ns
Height :
8.77mm
Voltage - Rated DC :
600V
Transistor Element Material :
SILICON
Switching Energy :
120μJ (on), 2.05mJ (off)
Turn On Time :
38 ns
Package / Case :
TO-220-3
Packaging :
Tube
Lead Free :
Lead Free
Max Power Dissipation :
60W
Terminal Position :
Single
Current Rating :
19A
Turn On Delay Time :
27 ns
Gate Charge :
27nC
Rise Time :
9.7ns
JEDEC-95 Code :
TO-220AB
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
1.6V
Td (on/off) @ 25°C :
27ns/540ns
Number of Pins :
3
Element Configuration :
Dual
Gate-Emitter Voltage-Max :
20V
Input Type :
Standard
Length :
10.54mm
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
1.4V
Number of Elements :
1
Test Condition :
480V, 10A, 50 Ω, 15V
Max Collector Current :
19A
Width :
4.69mm
Power Dissipation :
60W
Datasheets
IRG4BC20SPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4BC20SPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Number of Pins:3, IRG4BC20SPBF pinout, IRG4BC20SPBF datasheet PDF, IRG4BC20SPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4BC20SPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4BC20SPBF


IRG4BC20SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4BC20SPBF Description


The IRG4BC20SPBF is an IGBT 600 V 19 A 60 W Through Hole TO-220AB. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.



IRG4BC20SPBF Features


  • Industry standard TO-220AB package

  • Lead-Free

  • Standard: optimized for minimum saturation voltage and low operating frequencies (<1kHz)

  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

  • Generation 4 IGBTs offer highest efficiency available

  • IGBTs optimized for specified application conditions



IRG4BC20SPBF Applications


  • It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

  • It is used in UPS (Uninterruptible Power Supply) system.

  • It is used in AC and DC motor drives offering speed control.

  • It is used in chopper and inverters.

  • It is used in solar inverters.


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