IRG4BC20FDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Length :

10.5156mm

Voltage - Rated DC :

600V

Reverse Recovery Time :

37 ns

Radiation Hardening :

No

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 9A

Supplier Device Package :

TO-220AB

Current - Collector (Ic) (Max) :

16A

Gate Charge :

27nC

Factory Lead Time :

16 Weeks

Td (on/off) @ 25°C :

43ns/240ns

REACH SVHC :

No SVHC

Packaging :

Tube

Test Condition :

480V, 9A, 50Ohm, 15V

Termination :

Through Hole

Max Power Dissipation :

60W

Rise Time :

20ns

Collector Emitter Breakdown Voltage :

600V

Package / Case :

TO-220-3

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55°C

Published :

1997

Max Operating Temperature :

150°C

Current - Collector Pulsed (Icm) :

64A

Input Type :

Standard

Switching Energy :

250μJ (on), 640μJ (off)

Collector Emitter Saturation Voltage :

1.66V

Collector Emitter Voltage (VCEO) :

2V

Height :

8.77mm

Lead Free :

Contains Lead, Lead Free

Max Collector Current :

16A

Current Rating :

16A

Power - Max :

60W

Mounting Type :

Through Hole

Number of Pins :

3

RoHS Status :

RoHS Compliant

Polarity :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

600V

Mount :

Through Hole

Width :

4.69mm

Power Dissipation :

60W