IRG4BC15UD-LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

240μJ (on), 260μJ (off)

Number of Elements :

1

Mounting Type :

Through Hole

Element Configuration :

Single

Transistor Application :

POWER CONTROL

Rise Time :

20ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JESD-609 Code :

e3

ECCN Code :

EAR99

Turn On Time :

37 ns

Radiation Hardening :

No

Max Collector Current :

14A

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 7.8A

Turn-Off Delay Time :

160 ns

REACH SVHC :

No SVHC

Current - Collector Pulsed (Icm) :

42A

Height :

9.652mm

Voltage - Rated DC :

600V

Mount :

Through Hole

Turn On Delay Time :

17 ns

Packaging :

Tube

Power Dissipation :

49W

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Gate-Emitter Voltage-Max :

20V

Gate Charge :

23nC

Width :

4.826mm

Gate-Emitter Thr Voltage-Max :

6V

Max Power Dissipation :

49W

Peak Reflow Temperature (Cel) :

260

Td (on/off) @ 25°C :

17ns/160ns

Weight :

2.084002g

Collector Emitter Breakdown Voltage :

600V

Input Type :

Standard

Current Rating :

14A

Turn Off Time-Nom (toff) :

400 ns

Collector Emitter Voltage (VCEO) :

2.4V

Number of Terminations :

3

Collector Emitter Saturation Voltage :

2.02V

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Length :

10.668mm

Test Condition :

480V, 7.8A, 75 Ω, 15V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Factory Lead Time :

13 Weeks

Published :

2001

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

28 ns

Number of Pins :

3