SI1970DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.25W

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

SI1970

Element Configuration :

Dual

FET Feature :

Logic Level Gate

Published :

2013

Continuous Drain Current (ID) :

1.3A

Gate to Source Voltage (Vgs) :

12V

Fall Time (Typ) :

10 ns

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

225m Ω @ 1.2A, 4.5V

Number of Pins :

6

JESD-609 Code :

e3

Nominal Vgs :

1.6 V

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

740mW

Packaging :

Tape and Reel (TR)

Pin Count :

6

Lead Free :

Lead Free

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Resistance :

225mOhm

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

Unknown

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 10V

Peak Reflow Temperature (Cel) :

260

Rise Time :

10ns

Threshold Voltage :

1.6V

DS Breakdown Voltage-Min :

30V

Terminal Form :

Flat

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

95pF @ 15V

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

10 ns

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Number of Terminations :

6

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No