SI1902DL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

14 Weeks

Weight :

7.512624mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

16ns

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

6

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

10 ns

ECCN Code :

EAR99

JESD-609 Code :

e3

Continuous Drain Current (ID) :

660mA

Series :

TrenchFET®

Published :

2008

Number of Elements :

2

Radiation Hardening :

No

Pin Count :

6

Power Dissipation :

270mW

Rds On (Max) @ Id, Vgs :

385m Ω @ 660mA, 4.5V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

Fall Time (Typ) :

10 ns

Drain-source On Resistance-Max :

0.385Ohm

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Turn On Delay Time :

10 ns

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Form :

Gull wing

Pbfree Code :

yes

Mount :

Surface Mount

Transistor Element Material :

SILICON

Number of Terminations :

6

Base Part Number :

SI1902

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

270mW

Packaging :

Tape and Reel (TR)