SI1902CDL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Weight :

28.009329mg

Published :

2016

REACH SVHC :

No SVHC

Radiation Hardening :

No

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Height :

1.1mm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Threshold Voltage :

1.5V

Mount :

Surface Mount

Turn-Off Delay Time :

11 ns

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

235m Ω @ 1A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

1.1A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Fall Time (Typ) :

9 ns

Continuous Drain Current (ID) :

1A

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Dual

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Rise Time :

13ns

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 10V

Max Power Dissipation :

420mW

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Turn On Delay Time :

4 ns

Input Capacitance (Ciss) (Max) @ Vds :

62pF @ 10V

Factory Lead Time :

14 Weeks

Resistance :

235mOhm

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

12V

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

300mW

ECCN Code :

EAR99

Number of Pins :

6

Drain to Source Breakdown Voltage :

20V

Series :

TrenchFET®