SI1913DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Number of Elements :

2

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 100µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 P-Channel (Dual)

Power Dissipation :

570mW

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Power - Max :

570mW

Base Part Number :

SI1913

Min Operating Temperature :

-55°C

Turn On Delay Time :

18 ns

Drain to Source Resistance :

490mOhm

Package / Case :

6-TSSOP, SC-88, SOT-363

Published :

2008

Max Power Dissipation :

570mW

Current - Continuous Drain (Id) @ 25°C :

880mA

Drain to Source Breakdown Voltage :

20V

FET Feature :

Logic Level Gate

Threshold Voltage :

-450mV

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

-1A

Gate to Source Voltage (Vgs) :

8V

Resistance :

490mOhm

Nominal Vgs :

-450 mV

Rds On Max :

490 mΩ

Drain to Source Voltage (Vdss) :

20V

Turn-Off Delay Time :

15 ns

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

SC-70-6 (SOT-363)

Rise Time :

25ns

Fall Time (Typ) :

25 ns

Mount :

Surface Mount

REACH SVHC :

Unknown

Series :

TrenchFET®

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

490mOhm @ 880mA, 4.5V