SI1905BDH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

6-TSSOP, SC-88, SOT-363

Nominal Vgs :

-1 V

Rds On Max :

542 mΩ

Mounting Type :

Surface Mount

Input Capacitance :

62pF

Number of Elements :

2

Turn-Off Delay Time :

50 ns

Drain to Source Resistance :

542mOhm

Published :

2010

Turn On Delay Time :

9 ns

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Rise Time :

40ns

Max Power Dissipation :

357mW

Power Dissipation :

3.01W

Threshold Voltage :

-1V

Current - Continuous Drain (Id) @ 25°C :

630mA

Base Part Number :

SI1905

Continuous Drain Current (ID) :

-630mA

Supplier Device Package :

SC-70-6 (SOT-363)

Gate to Source Voltage (Vgs) :

8V

Lead Free :

Lead Free

Number of Pins :

6

REACH SVHC :

Unknown

Min Operating Temperature :

-55°C

Resistance :

542mOhm

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Power - Max :

357mW

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

60 ns

Drain to Source Voltage (Vdss) :

8V

Input Capacitance (Ciss) (Max) @ Vds :

62pF @ 4V

Rds On (Max) @ Id, Vgs :

542mOhm @ 580mA, 4.5V

FET Type :

2 P-Channel (Dual)

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount