SI1903DL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI1903

Transistor Element Material :

SILICON

Rise Time :

20ns

Turn-Off Delay Time :

8.5 ns

Radiation Hardening :

No

Terminal Finish :

PURE MATTE TIN

FET Feature :

Logic Level Gate

Fall Time (Typ) :

12 ns

Pbfree Code :

yes

Package / Case :

6-TSSOP, SC-88, SOT-363

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V

Rds On (Max) @ Id, Vgs :

995m Ω @ 410mA, 4.5V

ECCN Code :

EAR99

FET Type :

2 P-Channel (Dual)

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

410mA

Number of Elements :

2

Max Power Dissipation :

270mW

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Series :

TrenchFET®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.995Ohm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

0.41A

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

270mW

Mounting Type :

Surface Mount

Number of Pins :

6

Mount :

Surface Mount

Published :

2016

Pin Count :

6

Number of Terminations :

6

Turn On Delay Time :

7.5 ns

Terminal Form :

Gull wing