SI1912EDH-T1-E3

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Mfr.Part #
SI1912EDH-T1-E3
Manufacturer
Vishay
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET 2N-CH 20V 1.13A SC70-6
Stock
108,052
In Stock :
108,052

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Arrays
Transistor Element Material :
SILICON
Series :
TrenchFET®
Mounting Type :
Surface Mount
FET Type :
2 N-Channel (Dual)
Fall Time (Typ) :
85 ns
Nominal Vgs :
450 mV
Turn On Delay Time :
45 ns
Turn-Off Delay Time :
350 ns
Rds On (Max) @ Id, Vgs :
280m Ω @ 1.13A, 4.5V
Resistance :
280mOhm
Package / Case :
6-TSSOP, SC-88, SOT-363
RoHS Status :
ROHS3 Compliant
Number of Pins :
6
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Max Power Dissipation :
570mW
ECCN Code :
EAR99
Power Dissipation :
570mW
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
260
Rise Time :
85ns
Threshold Voltage :
450mV
Current - Continuous Drain (Id) @ 25°C :
1.13A
Operating Temperature :
-55°C~150°C TJ
Height :
900μm
Radiation Hardening :
No
Number of Elements :
2
JESD-609 Code :
e3
Terminal Form :
Gull wing
Width :
1.25mm
Base Part Number :
SI1912
Element Configuration :
Dual
Number of Terminations :
6
Pin Count :
6
Pbfree Code :
yes
REACH SVHC :
No SVHC
Length :
2.05mm
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
450mV @ 100μA (Min)
Gate to Source Voltage (Vgs) :
12V
Drain to Source Breakdown Voltage :
20V
Terminal Finish :
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
30
Drain Current-Max (Abs) (ID) :
1.13A
Gate Charge (Qg) (Max) @ Vgs :
1nC @ 4.5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
1.28A
Additional Feature :
ESD Protection
Packaging :
Tape and Reel (TR)
FET Feature :
Logic Level Gate
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
SI1912EDH-T1-E3
Introducing Transistors - FETs, MOSFETs - Arrays Vishay SI1912EDH-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:6-TSSOP, SC-88, SOT-363, Number of Pins:6, Operating Temperature:-55°C~150°C TJ, Base Part Number:SI1912, Number of Terminations:6, SI1912EDH-T1-E3 pinout, SI1912EDH-T1-E3 datasheet PDF, SI1912EDH-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Arrays Vishay SI1912EDH-T1-E3 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI1912EDH-T1-E3


SI1912EDH-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at

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