SI1912EDH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Series :

TrenchFET®

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

85 ns

Nominal Vgs :

450 mV

Turn On Delay Time :

45 ns

Turn-Off Delay Time :

350 ns

Rds On (Max) @ Id, Vgs :

280m Ω @ 1.13A, 4.5V

Resistance :

280mOhm

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

570mW

ECCN Code :

EAR99

Power Dissipation :

570mW

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Rise Time :

85ns

Threshold Voltage :

450mV

Current - Continuous Drain (Id) @ 25°C :

1.13A

Operating Temperature :

-55°C~150°C TJ

Height :

900μm

Radiation Hardening :

No

Number of Elements :

2

JESD-609 Code :

e3

Terminal Form :

Gull wing

Width :

1.25mm

Base Part Number :

SI1912

Element Configuration :

Dual

Number of Terminations :

6

Pin Count :

6

Pbfree Code :

yes

REACH SVHC :

No SVHC

Length :

2.05mm

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

450mV @ 100μA (Min)

Gate to Source Voltage (Vgs) :

12V

Drain to Source Breakdown Voltage :

20V

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

1.13A

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

1.28A

Additional Feature :

ESD Protection

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR