SI1912EDH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

12V

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Current - Continuous Drain (Id) @ 25°C :

1.13A

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Width :

1.25mm

Number of Pins :

6

Threshold Voltage :

450mV

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

450 mV

Drain to Source Breakdown Voltage :

20V

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Element Material :

SILICON

Resistance :

280mOhm

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

450mV @ 100μA (Min)

Rise Time :

85ns

Pin Count :

6

REACH SVHC :

No SVHC

Base Part Number :

SI1912

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

1.13A

Lead Free :

Lead Free

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Length :

2.05mm

Radiation Hardening :

No

Number of Elements :

2

Fall Time (Typ) :

85 ns

Max Power Dissipation :

570mW

Series :

TrenchFET®

Power Dissipation :

570mW

Additional Feature :

ESD Protection

Element Configuration :

Dual

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

280m Ω @ 1.13A, 4.5V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

1.28A

Height :

900μm

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Mounting Type :

Surface Mount

Turn-Off Delay Time :

350 ns

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 4.5V

Turn On Delay Time :

45 ns