SI1912EDH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

1.13A

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

12V

Resistance :

280mOhm

REACH SVHC :

No SVHC

Max Power Dissipation :

570mW

Drain Current-Max (Abs) (ID) :

1.13A

Pin Count :

6

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

350 ns

Fall Time (Typ) :

85 ns

Number of Elements :

2

Transistor Application :

SWITCHING

Element Configuration :

Dual

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

45 ns

Mount :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 4.5V

Vgs(th) (Max) @ Id :

450mV @ 100μA (Min)

Power Dissipation :

570mW

Height :

900μm

Number of Terminations :

6

Number of Pins :

6

Additional Feature :

ESD Protection

Rise Time :

85ns

Rds On (Max) @ Id, Vgs :

280m Ω @ 1.13A, 4.5V

Threshold Voltage :

450mV

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

SI1912

Pbfree Code :

yes

Width :

1.25mm

Length :

2.05mm

Continuous Drain Current (ID) :

1.28A

Radiation Hardening :

No

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Series :

TrenchFET®

JESD-609 Code :

e3

Nominal Vgs :

450 mV

Drain to Source Breakdown Voltage :

20V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON