SI1905DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Continuous Drain Current (ID) :

570mA

Drain Current-Max (Abs) (ID) :

0.57A

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Mount :

Surface Mount

Power Dissipation :

270mW

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

20

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Max Power Dissipation :

270mW

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 P-Channel (Dual)

Nominal Vgs :

-450 mV

Turn-Off Delay Time :

10 ns

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

8V

Base Part Number :

SI1905

Number of Pins :

6

Pbfree Code :

yes

Package / Case :

6-TSSOP, SC-88, SOT-363

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

25 ns

Turn On Delay Time :

6 ns

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Terminal Finish :

MATTE TIN

Rise Time :

25ns

Resistance :

600mOhm

Rds On (Max) @ Id, Vgs :

600m Ω @ 570mA, 4.5V