SI1900DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

480m Ω @ 590mA, 10V

Time@Peak Reflow Temperature-Max (s) :

40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

5 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Published :

2007

Height :

1mm

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Transistor Element Material :

SILICON

Resistance :

480mOhm

REACH SVHC :

Unknown

Rise Time :

8ns

Current - Continuous Drain (Id) @ 25°C :

590mA

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

630mA

Drain Current-Max (Abs) (ID) :

0.59A

Power Dissipation :

270mW

Nominal Vgs :

3 V

Package / Case :

6-TSSOP, SC-88, SOT-363

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Weight :

7.512624mg

Mount :

Surface Mount

Base Part Number :

SI1900

Max Power Dissipation :

270mW

Length :

2mm

Number of Channels :

2

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

JESD-609 Code :

e3

Width :

1.25mm

Number of Elements :

2

Number of Terminations :

6

Fall Time (Typ) :

8 ns

Turn-Off Delay Time :

8 ns

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing