SI1900DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2007

Weight :

7.512624mg

Length :

2mm

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Nominal Vgs :

3 V

Width :

1.25mm

Transistor Element Material :

SILICON

Base Part Number :

SI1900

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

REACH SVHC :

Unknown

Turn On Delay Time :

5 ns

Power Dissipation :

270mW

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 10V

Rds On (Max) @ Id, Vgs :

480m Ω @ 590mA, 10V

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

yes

Package / Case :

6-TSSOP, SC-88, SOT-363

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

590mA

Series :

TrenchFET®

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

6

Rise Time :

8ns

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Mount :

Surface Mount

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.59A

Number of Elements :

2

Turn-Off Delay Time :

8 ns

Continuous Drain Current (ID) :

630mA

Fall Time (Typ) :

8 ns

Resistance :

480mOhm

Element Configuration :

Dual

Max Power Dissipation :

270mW

Height :

1mm