SI1903DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

20 ns

Nominal Vgs :

-1.5 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

12V

Number of Terminations :

6

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

410mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Max Power Dissipation :

270mW

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V

Continuous Drain Current (ID) :

440mA

Number of Elements :

2

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

995m Ω @ 410mA, 4.5V

Power Dissipation :

270mW

Lead Free :

Lead Free

Base Part Number :

SI1903

Drain Current-Max (Abs) (ID) :

0.41A

FET Type :

2 P-Channel (Dual)

Feedback Cap-Max (Crss) :

888 pF

Threshold Voltage :

-1.5V

Turn On Delay Time :

7.5 ns

Mount :

Surface Mount

Rise Time :

20ns

Pbfree Code :

yes

Number of Pins :

6

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Turn-Off Delay Time :

8.5 ns

Operating Temperature :

-55°C~150°C TJ

Resistance :

995mOhm

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)