SI1903DL-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

20V

FET Feature :

Logic Level Gate

Fall Time (Typ) :

20 ns

Turn-Off Delay Time :

8.5 ns

Max Power Dissipation :

270mW

Number of Terminations :

6

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Pbfree Code :

yes

Number of Elements :

2

Mount :

Surface Mount

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Threshold Voltage :

-1.5V

Element Configuration :

Dual

Drain Current-Max (Abs) (ID) :

0.41A

FET Type :

2 P-Channel (Dual)

Feedback Cap-Max (Crss) :

888 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

995m Ω @ 410mA, 4.5V

Series :

TrenchFET®

Package / Case :

6-TSSOP, SC-88, SOT-363

Rise Time :

20ns

Resistance :

995mOhm

Lead Free :

Lead Free

Radiation Hardening :

No

Base Part Number :

SI1903

ECCN Code :

EAR99

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

270mW

REACH SVHC :

No SVHC

Pin Count :

6

Continuous Drain Current (ID) :

440mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

410mA

Turn On Delay Time :

7.5 ns

Nominal Vgs :

-1.5 V

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V