SI1958DH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

FET Type :

2 N-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Delay Time :

8 ns

Threshold Voltage :

1.6V

Transistor Element Material :

SILICON

Rise Time :

25ns

Mount :

Surface Mount

Dual Supply Voltage :

20V

Drain to Source Breakdown Voltage :

20V

Element Configuration :

Dual

Pin Count :

6

Resistance :

340mOhm

Nominal Vgs :

1.6 V

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

12V

Max Power Dissipation :

740mW

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Fall Time (Typ) :

25 ns

Turn-Off Delay Time :

10 ns

Package / Case :

6-TSSOP, SC-88, SOT-363

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 10V

Terminal Form :

Gull wing

Termination :

SMD/SMT

ECCN Code :

EAR99

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

105pF @ 10V

Power - Max :

1.25W

Continuous Drain Current (ID) :

1.3A

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Power Dissipation :

740mW

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Radiation Hardening :

No

JESD-609 Code :

e3

Base Part Number :

SI1958

Published :

2013

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

205m Ω @ 1.3A, 4.5V

Terminal Finish :

MATTE TIN

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ