BFG540W/X,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.21.00.75

Additional Feature :

High Reliability

Power Dissipation Ambient-Max :

0.5W

Frequency - Transition :

9GHz

JESD-609 Code :

e3

Base Part Number :

BFG540

JESD-30 Code :

R-PDSO-G4

Terminal Finish :

Matte Tin (Sn)

Published :

1995

Highest Frequency Band :

L B

Qualification Status :

Not Qualified

Current - Collector (Ic) (Max) :

120mA

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Operating Temperature :

175°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 40mA 8V

Voltage - Collector Emitter Breakdown (Max) :

15V

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.4dB @ 900MHz

Terminal Position :

Dual

Polarity/Channel Type :

NPN

Surface Mount :

yes

Power Dissipation-Max (Abs) :

0.5W

Number of Elements :

1

Power - Max :

500mW

Case Connection :

COLLECTOR

Pin Count :

4

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

4

Mounting Type :

Surface Mount

Transistor Type :

NPN

Package / Case :

SC-82A, SOT-343

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Transition Frequency :

9000MHz

Transistor Element Material :

SILICON