BFG540W/X,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Finish :

Matte Tin (Sn)

Current - Collector (Ic) (Max) :

120mA

Package / Case :

SC-82A, SOT-343

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G4

RoHS Status :

ROHS3 Compliant

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.4dB @ 900MHz

Additional Feature :

High Reliability

Number of Elements :

1

Pin Count :

4

HTS Code :

8541.21.00.75

Published :

1995

Transition Frequency :

9000MHz

Transistor Element Material :

SILICON

Configuration :

Single

Operating Temperature :

175°C TJ

Polarity/Channel Type :

NPN

Surface Mount :

yes

Highest Frequency Band :

L B

Number of Terminations :

4

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BFG540

Power Dissipation-Max (Abs) :

0.5W

Frequency - Transition :

9GHz

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

260

Voltage - Collector Emitter Breakdown (Max) :

15V

Power Dissipation Ambient-Max :

0.5W

Power - Max :

500mW

Case Connection :

COLLECTOR

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 40mA 8V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99