BFG520/X,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency - Transition :

9GHz

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G4

Configuration :

Single

Terminal Form :

Gull wing

Noise Figure (dB Typ @ f) :

1.1dB ~ 2.1dB @ 900MHz

Transistor Type :

NPN

Power - Max :

300mW

Current - Collector (Ic) (Max) :

70mA

Additional Feature :

High Reliability

Base Part Number :

BFG520

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

0.3W

Power Dissipation Ambient-Max :

0.3W

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA 6V

Surface Mount :

yes

Operating Temperature :

175°C TJ

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

9000MHz

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Terminal Position :

Dual

Number of Terminations :

4

Number of Elements :

1

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Reference Standard :

CECC

Voltage - Collector Emitter Breakdown (Max) :

15V

Highest Frequency Band :

L B

Terminal Finish :

Matte Tin (Sn)

HTS Code :

8541.21.00.75

Published :

1997

Package / Case :

TO-253-4, TO-253AA

Polarity/Channel Type :

NPN