BFG520,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Pin Count :

4

Frequency - Transition :

9GHz

Configuration :

Single

Noise Figure (dB Typ @ f) :

1.1dB ~ 2.1dB @ 900MHz

Reference Standard :

CECC

Terminal Finish :

Tin (Sn)

Highest Frequency Band :

L B

Additional Feature :

High Reliability

Published :

1997

Power - Max :

300mW

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA 6V

Number of Elements :

1

Base Part Number :

BFG520

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Collector Emitter Breakdown (Max) :

15V

HTS Code :

8541.21.00.75

Operating Temperature :

175°C TJ

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max (Abs) :

0.3W

Polarity/Channel Type :

NPN

Qualification Status :

Not Qualified

Transistor Type :

NPN

Surface Mount :

yes

ECCN Code :

EAR99

Terminal Position :

Dual

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

70mA

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Transition Frequency :

9000MHz

Package / Case :

TO-253-4, TO-253AA

Power Dissipation Ambient-Max :

0.3W

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G4