BFG520,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA 6V

Number of Terminations :

4

Operating Temperature :

175°C TJ

Qualification Status :

Not Qualified

Noise Figure (dB Typ @ f) :

1.1dB ~ 2.1dB @ 900MHz

Frequency - Transition :

9GHz

Pin Count :

4

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

70mA

Transistor Element Material :

SILICON

Surface Mount :

yes

Transistor Application :

SWITCHING

Terminal Position :

Dual

Power Dissipation-Max (Abs) :

0.3W

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

HTS Code :

8541.21.00.75

Transition Frequency :

9000MHz

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

15V

Reference Standard :

CECC

Highest Frequency Band :

L B

JESD-30 Code :

R-PDSO-G4

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Transistor Type :

NPN

Number of Elements :

1

Package / Case :

TO-253-4, TO-253AA

ECCN Code :

EAR99

Base Part Number :

BFG520

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

RoHS Status :

ROHS3 Compliant

Power - Max :

300mW

Additional Feature :

High Reliability

Polarity/Channel Type :

NPN

Terminal Finish :

Tin (Sn)

Power Dissipation Ambient-Max :

0.3W