BFG505,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Base Part Number :

BFG505

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Polarity/Channel Type :

NPN

Transition Frequency :

9000MHz

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.75

Power Dissipation Ambient-Max :

0.15W

ECCN Code :

EAR99

Power - Max :

150mW

Number of Terminations :

4

Additional Feature :

High Reliability

Current - Collector (Ic) (Max) :

18mA

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

4

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Reference Standard :

CECC

Transistor Type :

NPN

Package / Case :

TO-253-4, TO-253AA

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G4

Voltage - Collector Emitter Breakdown (Max) :

15V

Terminal Form :

Gull wing

Terminal Position :

Dual

Power Dissipation-Max (Abs) :

0.15W

Published :

1998

Operating Temperature :

175°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 6V

Noise Figure (dB Typ @ f) :

1.2dB ~ 2.1dB @ 900MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Configuration :

Single

Case Connection :

COLLECTOR

Frequency - Transition :

9GHz

Transistor Application :

SWITCHING

Highest Frequency Band :

L B

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified