BFG505,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Power - Max :

150mW

Power Dissipation Ambient-Max :

0.15W

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G4

Power Dissipation-Max (Abs) :

0.15W

Case Connection :

COLLECTOR

Transition Frequency :

9000MHz

Reference Standard :

CECC

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Highest Frequency Band :

L B

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 6V

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Number of Elements :

1

Base Part Number :

BFG505

Frequency - Transition :

9GHz

Current - Collector (Ic) (Max) :

18mA

JESD-609 Code :

e3

Operating Temperature :

175°C TJ

Qualification Status :

Not Qualified

Terminal Position :

Dual

Terminal Form :

Gull wing

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-253-4, TO-253AA

HTS Code :

8541.21.00.75

Configuration :

Single

Published :

1998

Pin Count :

4

Noise Figure (dB Typ @ f) :

1.2dB ~ 2.1dB @ 900MHz

Number of Terminations :

4

Voltage - Collector Emitter Breakdown (Max) :

15V

Transistor Type :

NPN

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount