BFG540W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-343 Reverse Pinning

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Noise Figure (dB Typ @ f) :

1.3dB ~ 1.8dB @ 900MHz

Highest Frequency Band :

L B

Transistor Element Material :

SILICON

Number of Elements :

1

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Transition Frequency :

9000MHz

Published :

1995

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 40mA 8V

Power Dissipation-Max (Abs) :

0.5W

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PDSO-G4

Frequency - Transition :

9GHz

Operating Temperature :

175°C TJ

Current - Collector (Ic) (Max) :

120mA

Power - Max :

500mW

Additional Feature :

High Reliability

Terminal Position :

Dual

JESD-609 Code :

e3

Power Dissipation Ambient-Max :

0.5W

Surface Mount :

yes

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Base Part Number :

BFG540

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Qualification Status :

Not Qualified

Number of Terminations :

4

Pin Count :

4

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN

Terminal Form :

Gull wing

Voltage - Collector Emitter Breakdown (Max) :

15V

Transistor Application :

AMPLIFIER

Configuration :

Single