BFG540W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation Ambient-Max :

0.5W

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Noise Figure (dB Typ @ f) :

1.3dB ~ 1.8dB @ 900MHz

Power Dissipation-Max (Abs) :

0.5W

Transition Frequency :

9000MHz

JESD-30 Code :

R-PDSO-G4

Terminal Finish :

Tin (Sn)

Case Connection :

COLLECTOR

Pin Count :

4

Current - Collector (Ic) (Max) :

120mA

Number of Elements :

1

Number of Terminations :

4

Operating Temperature :

175°C TJ

Transistor Application :

AMPLIFIER

Base Part Number :

BFG540

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 40mA 8V

Terminal Form :

Gull wing

Power - Max :

500mW

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

9GHz

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Published :

1995

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V

HTS Code :

8541.21.00.75

Terminal Position :

Dual

Package / Case :

SOT-343 Reverse Pinning

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

High Reliability

Highest Frequency Band :

L B