BFG540,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency - Transition :

9GHz

Transition Frequency :

9000MHz

Configuration :

Single

Reference Standard :

CECC

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 40mA 8V

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Voltage - Collector Emitter Breakdown (Max) :

15V

Power Dissipation-Max (Abs) :

0.5W

HTS Code :

8541.21.00.75

Transistor Type :

NPN

Terminal Position :

Dual

Qualification Status :

Not Qualified

ECCN Code :

EAR99

JESD-609 Code :

e3

Package / Case :

TO-253-4, TO-253AA

Power - Max :

400mW

Published :

1995

Terminal Form :

Gull wing

Pin Count :

4

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PDSO-G4

Power Dissipation Ambient-Max :

0.5W

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Base Part Number :

BFG540

Operating Temperature :

150°C TJ

Noise Figure (dB Typ @ f) :

1.3dB ~ 1.8dB @ 900MHz

Current - Collector (Ic) (Max) :

120mA

Highest Frequency Band :

L B

Additional Feature :

High Reliability

Polarity/Channel Type :

NPN