BFG540,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Configuration :

Single

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Number of Terminations :

4

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-253-4, TO-253AA

Power - Max :

400mW

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V

Peak Reflow Temperature (Cel) :

260

Published :

1995

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Power Dissipation-Max (Abs) :

0.5W

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PDSO-G4

Transistor Application :

AMPLIFIER

Current - Collector (Ic) (Max) :

120mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 40mA 8V

Frequency - Transition :

9GHz

ECCN Code :

EAR99

Highest Frequency Band :

L B

HTS Code :

8541.21.00.75

Transistor Element Material :

SILICON

Transition Frequency :

9000MHz

Reference Standard :

CECC

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Noise Figure (dB Typ @ f) :

1.3dB ~ 1.8dB @ 900MHz

Power Dissipation Ambient-Max :

0.5W

Pin Count :

4

Packaging :

Tape and Reel (TR)

Base Part Number :

BFG540

Surface Mount :

yes

Number of Elements :

1

Terminal Position :

Dual