BFG540/X,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature :

150°C TJ

Surface Mount :

yes

Power - Max :

400mW

Power Dissipation-Max (Abs) :

0.5W

Highest Frequency Band :

L B

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

Single

Published :

1995

Power Dissipation Ambient-Max :

0.5W

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 40mA 8V

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Voltage - Collector Emitter Breakdown (Max) :

15V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G4

Transistor Application :

AMPLIFIER

Number of Terminations :

4

Terminal Form :

Gull wing

Current - Collector (Ic) (Max) :

120mA

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

HTS Code :

8541.21.00.75

Frequency - Transition :

9GHz

Packaging :

Tape and Reel (TR)

Pin Count :

4

Package / Case :

TO-253-4, TO-253AA

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Reference Standard :

CECC

Transition Frequency :

9000MHz

Base Part Number :

BFG540

Transistor Type :

NPN

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.4dB @ 900MHz

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability