BFG540/X,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.4dB @ 900MHz

Power - Max :

400mW

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G4

Power Dissipation-Max (Abs) :

0.5W

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

HTS Code :

8541.21.00.75

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 40mA 8V

Pin Count :

4

Published :

1995

Additional Feature :

High Reliability

Power Dissipation Ambient-Max :

0.5W

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

9000MHz

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BFG540

ECCN Code :

EAR99

Terminal Position :

Dual

Number of Terminations :

4

Case Connection :

COLLECTOR

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Frequency - Transition :

9GHz

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Reference Standard :

CECC

Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

15V

Highest Frequency Band :

L B

Polarity/Channel Type :

NPN

Current - Collector (Ic) (Max) :

120mA

Package / Case :

TO-253-4, TO-253AA

Surface Mount :

yes