BFG520W,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Voltage - Collector Emitter Breakdown (Max) :

15V

Operating Temperature :

175°C TJ

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

NPN

Configuration :

Single

Power Dissipation-Max (Abs) :

0.5W

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G4

Pin Count :

4

Terminal Position :

Dual

Number of Elements :

1

Transition Frequency :

9000MHz

Power - Max :

500mW

Number of Terminations :

4

Polarity/Channel Type :

NPN

Package / Case :

SOT-343 Reverse Pinning

Surface Mount :

yes

Qualification Status :

Not Qualified

Highest Frequency Band :

L B

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 20mA 6V

Frequency - Transition :

9GHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Published :

1998

Noise Figure (dB Typ @ f) :

1.1dB ~ 2.1dB @ 900MHz

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

JESD-609 Code :

e3

HTS Code :

8541.21.00.75

Current - Collector (Ic) (Max) :

70mA

Base Part Number :

BFG520

RoHS Status :

ROHS3 Compliant