APTM50TDUM65PG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

UPPER

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Packaging :

Bulk

Additional Feature :

AVALANCHE RATED

FET Type :

6 N-Channel (3-Phase Bridge)

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500V

Avalanche Energy Rating (Eas) :

3000 mJ

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Mounting Type :

Chassis Mount

Max Power Dissipation :

390W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.078Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Number of Elements :

6

RoHS Status :

RoHS Compliant

Terminal Form :

UNSPECIFIED

Operating Temperature :

-40°C~150°C TJ

Pin Count :

21

JESD-30 Code :

R-XUFM-X21

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

390W

Pulsed Drain Current-Max (IDM) :

204A

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

78m Ω @ 25.5A, 10V

Number of Terminations :

21

Terminal Finish :

TIN SILVER COPPER

Continuous Drain Current (ID) :

51A

Mount :

Chassis Mount, Screw

Number of Pins :

6

Configuration :

3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

500V

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

SP6

FET Feature :

Standard

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE