APTM100AM90FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Fall Time (Typ) :

40 ns

Number of Pins :

6

Terminal Position :

UPPER

JESD-609 Code :

e1

Package / Case :

SP6

Mount :

Chassis Mount, Screw

DS Breakdown Voltage-Min :

1000V

Gate Charge (Qg) (Max) @ Vgs :

744nC @ 10V

Rise Time :

12ns

Mounting Type :

Chassis Mount

Pin Count :

7

Vgs(th) (Max) @ Id :

5V @ 10mA

Factory Lead Time :

36 Weeks

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

2

Turn On Delay Time :

18 ns

Power Dissipation :

1.25kW

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN SILVER COPPER

FET Feature :

Standard

ECCN Code :

EAR99

Lead Free :

Lead Free

JESD-30 Code :

R-XUFM-X7

Rds On (Max) @ Id, Vgs :

105m Ω @ 39A, 10V

Additional Feature :

AVALANCHE RATED

Max Power Dissipation :

1.25kW

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2006

Gate to Source Voltage (Vgs) :

30V

Power - Max :

1250W

Avalanche Energy Rating (Eas) :

3000 mJ

FET Type :

2 N-Channel (Half Bridge)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.105Ohm

Continuous Drain Current (ID) :

78A

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Case Connection :

Isolated

Terminal Form :

UNSPECIFIED

Drain to Source Voltage (Vdss) :

1000V 1kV

Input Capacitance (Ciss) (Max) @ Vds :

20700pF @ 25V

Turn-Off Delay Time :

155 ns

Number of Terminations :

7

FET Technology :

METAL-OXIDE SEMICONDUCTOR