APTM100AM90FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

30V

DS Breakdown Voltage-Min :

1000V

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

1.25kW

FET Feature :

Standard

Case Connection :

Isolated

Fall Time (Typ) :

40 ns

Pin Count :

7

Rds On (Max) @ Id, Vgs :

105m Ω @ 39A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

TIN SILVER COPPER

Packaging :

Bulk

Vgs(th) (Max) @ Id :

5V @ 10mA

Terminal Form :

UNSPECIFIED

Turn-Off Delay Time :

155 ns

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

1000V 1kV

Published :

2006

Max Power Dissipation :

1.25kW

Factory Lead Time :

36 Weeks

Transistor Application :

SWITCHING

Operating Temperature :

-40°C~150°C TJ

Avalanche Energy Rating (Eas) :

3000 mJ

Power - Max :

1250W

JESD-30 Code :

R-XUFM-X7

Rise Time :

12ns

Number of Elements :

2

Additional Feature :

AVALANCHE RATED

FET Type :

2 N-Channel (Half Bridge)

Lead Free :

Lead Free

Turn On Delay Time :

18 ns

Mounting Type :

Chassis Mount

Drain-source On Resistance-Max :

0.105Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Pins :

6

Continuous Drain Current (ID) :

78A

Qualification Status :

Not Qualified

Package / Case :

SP6

Input Capacitance (Ciss) (Max) @ Vds :

20700pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Number of Terminations :

7

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

744nC @ 10V

Transistor Element Material :

SILICON

Mount :

Chassis Mount, Screw

Terminal Position :

UPPER