APTM100AM90FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

78A

Rds On (Max) @ Id, Vgs :

105m Ω @ 39A, 10V

Terminal Finish :

TIN SILVER COPPER

Factory Lead Time :

36 Weeks

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Turn-Off Delay Time :

155 ns

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-XUFM-X7

Published :

2006

FET Feature :

Standard

Terminal Position :

UPPER

Number of Pins :

6

ECCN Code :

EAR99

Power Dissipation :

1.25kW

Drain-source On Resistance-Max :

0.105Ohm

Mounting Type :

Chassis Mount

Avalanche Energy Rating (Eas) :

3000 mJ

FET Type :

2 N-Channel (Half Bridge)

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

Isolated

DS Breakdown Voltage-Min :

1000V

Fall Time (Typ) :

40 ns

Mount :

Chassis Mount, Screw

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

12ns

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

1000V 1kV

Max Power Dissipation :

1.25kW

Pin Count :

7

Terminal Form :

UNSPECIFIED

Turn On Delay Time :

18 ns

Vgs(th) (Max) @ Id :

5V @ 10mA

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

20700pF @ 25V

Package / Case :

SP6

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

744nC @ 10V

JESD-609 Code :

e1

Number of Elements :

2

Number of Terminations :

7

Additional Feature :

AVALANCHE RATED

Power - Max :

1250W