APTM100DA18T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Power Dissipation-Max :

657W Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

570nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

14800pF @ 25V

Published :

2007

JESD-609 Code :

e1

Package / Case :

SP1

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Operating Temperature :

-40°C~150°C TJ

Packaging :

Bulk

Vgs (Max) :

±30V

Additional Feature :

AVALANCHE RATED

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Number of Pins :

1

Number of Terminations :

12

Reach Compliance Code :

Unknown

Mounting Type :

Chassis Mount

Pin Count :

12

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pulsed Drain Current-Max (IDM) :

260A

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Mount :

Chassis Mount, Screw

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

216m Ω @ 33A, 10V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

40A

Power Dissipation :

657W

Drain to Source Voltage (Vdss) :

1000V

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Terminal Form :

UNSPECIFIED