APTM100DA18T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drain to Source Voltage (Vdss) :

1000V

Terminal Position :

UPPER

Qualification Status :

Not Qualified

Case Connection :

Isolated

Vgs (Max) :

±30V

Package / Case :

SP1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

657W

Terminal Form :

UNSPECIFIED

RoHS Status :

RoHS Compliant

Number of Pins :

1

Rds On (Max) @ Id, Vgs :

216m Ω @ 33A, 10V

Packaging :

Bulk

Number of Terminations :

12

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Operating Temperature :

-40°C~150°C TJ

ECCN Code :

EAR99

Mount :

Chassis Mount, Screw

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

14800pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

260A

JESD-609 Code :

e1

Transistor Application :

SWITCHING

Mounting Type :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

570nC @ 10V

Reach Compliance Code :

Unknown

Additional Feature :

AVALANCHE RATED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation-Max :

657W Tc

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

40A

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

12

FET Type :

N-Channel

Published :

2007