APTM100A13SG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

62mm

Number of Channels :

1

Radiation Hardening :

No

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Length :

108mm

Turn On Delay Time :

9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SP6

Packaging :

Bulk

Published :

1999

Input Capacitance (Ciss) (Max) @ Vds :

15200pF @ 25V

FET Type :

2 N-Channel (Half Bridge)

Element Configuration :

Single

Rise Time :

9ns

Vgs(th) (Max) @ Id :

5V @ 6mA

Factory Lead Time :

16 Weeks

JESD-609 Code :

e1

Number of Elements :

2

Mounting Type :

Chassis Mount

Resistance :

156mOhm

Gate Charge (Qg) (Max) @ Vgs :

562nC @ 10V

Terminal Form :

UNSPECIFIED

Pin Count :

7

Power - Max :

1250W

Height :

21.9mm

Turn-Off Delay Time :

50 ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

156m Ω @ 32.5A, 10V

Mount :

Chassis Mount, Screw

Number of Pins :

6

Number of Terminations :

7

Drain to Source Voltage (Vdss) :

1000V 1kV

Terminal Position :

UPPER

Lead Free :

Lead Free

Operating Temperature :

-40°C~150°C TJ

Power Dissipation :

1.25kW

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-30 Code :

R-XUFM-X7

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

24 ns

FET Feature :

Standard

Continuous Drain Current (ID) :

65A

Additional Feature :

AVALANCHE RATED

Max Power Dissipation :

1.25kW

Case Connection :

Isolated

Terminal Finish :

TIN SILVER COPPER

RoHS Status :

RoHS Compliant