APTM100A12STG
- Mfr.Part #
- APTM100A12STG
- Manufacturer
- Microsemi
- Package / Case
- SP3
- Datasheet
- Download
- Description
- MOSFET 2N-CH 1000V 68A LP8W
- Stock
- 32,630
- In Stock :
- 32,630
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Terminal Form :
- UNSPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 17400pF @ 25V
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- UPPER
- Max Power Dissipation :
- 1.25kW
- Operating Temperature :
- -40°C~150°C TJ
- Pin Count :
- 9
- Case Connection :
- Isolated
- JESD-30 Code :
- R-XUFM-X9
- Vgs(th) (Max) @ Id :
- 5V @ 10mA
- Packaging :
- Bulk
- Mount :
- Chassis Mount
- JESD-609 Code :
- e1
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Number of Pins :
- 3
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Application :
- SWITCHING
- FET Type :
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss) :
- 1000V 1kV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 270A
- DS Breakdown Voltage-Min :
- 1000V
- Mounting Type :
- Chassis Mount
- Drain-source On Resistance-Max :
- 0.12Ohm
- Number of Terminations :
- 9
- Configuration :
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 616nC @ 10V
- Power - Max :
- 1250W
- Number of Elements :
- 2
- Pbfree Code :
- yes
- Package / Case :
- SP3
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 34A, 10V
- Published :
- 2004
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 68A
- FET Feature :
- Standard
- Datasheets
- APTM100A12STG
APTM100A12STG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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