APTM100A12STG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

1000V

JESD-609 Code :

e1

Pulsed Drain Current-Max (IDM) :

270A

Continuous Drain Current (ID) :

68A

Number of Pins :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

120m Ω @ 34A, 10V

Packaging :

Bulk

Number of Elements :

2

Pin Count :

9

Operating Temperature :

-40°C~150°C TJ

Avalanche Energy Rating (Eas) :

2500 mJ

Transistor Application :

SWITCHING

Published :

2004

Number of Terminations :

9

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

616nC @ 10V

Drain to Source Voltage (Vdss) :

1000V 1kV

Max Power Dissipation :

1.25kW

Terminal Position :

UPPER

Case Connection :

Isolated

Terminal Form :

UNSPECIFIED

JESD-30 Code :

R-XUFM-X9

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.12Ohm

Power - Max :

1250W

Package / Case :

SP3

Mounting Type :

Chassis Mount

Input Capacitance (Ciss) (Max) @ Vds :

17400pF @ 25V

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN SILVER COPPER

Mount :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 10mA

Pbfree Code :

yes

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

2 N-Channel (Half Bridge)

FET Feature :

Standard

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR