APTM100A12STG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.12Ohm

Mounting Type :

Chassis Mount

Terminal Form :

UNSPECIFIED

Pbfree Code :

yes

Published :

2004

Package / Case :

SP3

Operating Temperature :

-40°C~150°C TJ

Transistor Application :

SWITCHING

Pin Count :

9

DS Breakdown Voltage-Min :

1000V

Max Power Dissipation :

1.25kW

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

JESD-30 Code :

R-XUFM-X9

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

270A

Power - Max :

1250W

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

616nC @ 10V

Number of Elements :

2

Packaging :

Bulk

FET Feature :

Standard

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Mount :

Chassis Mount

RoHS Status :

RoHS Compliant

Number of Terminations :

9

Vgs(th) (Max) @ Id :

5V @ 10mA

Drain to Source Voltage (Vdss) :

1000V 1kV

FET Type :

2 N-Channel (Half Bridge)

Continuous Drain Current (ID) :

68A

Additional Feature :

AVALANCHE RATED

Terminal Position :

UPPER

Avalanche Energy Rating (Eas) :

2500 mJ

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

17400pF @ 25V

Rds On (Max) @ Id, Vgs :

120m Ω @ 34A, 10V

Terminal Finish :

TIN SILVER COPPER

Number of Pins :

3