APTM100A12STG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

2500 mJ

Rds On (Max) @ Id, Vgs :

120m Ω @ 34A, 10V

Terminal Form :

UNSPECIFIED

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Vgs(th) (Max) @ Id :

5V @ 10mA

Qualification Status :

Not Qualified

Package / Case :

SP3

Packaging :

Bulk

Mounting Type :

Chassis Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

1000V

Additional Feature :

AVALANCHE RATED

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-XUFM-X9

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Number of Elements :

2

Mount :

Chassis Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

UPPER

Number of Terminations :

9

Pin Count :

9

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.12Ohm

Continuous Drain Current (ID) :

68A

Max Power Dissipation :

1.25kW

Drain to Source Voltage (Vdss) :

1000V 1kV

Power - Max :

1250W

Operating Temperature :

-40°C~150°C TJ

Case Connection :

Isolated

Transistor Application :

SWITCHING

FET Type :

2 N-Channel (Half Bridge)

Input Capacitance (Ciss) (Max) @ Vds :

17400pF @ 25V

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

616nC @ 10V

Pulsed Drain Current-Max (IDM) :

270A

Terminal Finish :

TIN SILVER COPPER