APTM100DA18TG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

TIN SILVER COPPER

Mount :

Chassis Mount, Screw

Turn On Delay Time :

18 ns

Continuous Drain Current (ID) :

43A

Input Capacitance (Ciss) (Max) @ Vds :

10400pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 5mA

Turn-Off Delay Time :

155 ns

Additional Feature :

AVALANCHE RATED

Terminal Form :

UNSPECIFIED

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

780W Tc

Vgs (Max) :

±30V

Pbfree Code :

yes

Mounting Type :

Chassis Mount

Configuration :

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

Published :

2006

Rise Time :

12ns

Fall Time (Typ) :

40 ns

Package / Case :

SP4

Packaging :

Bulk

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Rds On (Max) @ Id, Vgs :

210m Ω @ 21.5A, 10V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

12

ECCN Code :

EAR99

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Number of Pins :

4

Avalanche Energy Rating (Eas) :

3000 mJ

Power Dissipation :

780W

Drain to Source Voltage (Vdss) :

1000V

RoHS Status :

RoHS Compliant

Number of Terminations :

12

Terminal Position :

UPPER

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

372nC @ 10V

Factory Lead Time :

36 Weeks