APTM100A46FT1G
- Mfr.Part #
- APTM100A46FT1G
- Manufacturer
- Microsemi
- Package / Case
- SP1
- Datasheet
- Download
- Description
- MOSFET 2N-CH 1000V 19A SP1
- Stock
- 9,700
- In Stock :
- 9,700
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- 2 N-Channel (Half Bridge)
- Operating Temperature :
- -40°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Additional Feature :
- AVALANCHE RATED
- Mount :
- Chassis Mount, Screw
- Number of Elements :
- 2
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 1000V 1kV
- Gate to Source Voltage (Vgs) :
- 30V
- Pin Count :
- 12
- Package / Case :
- SP1
- Terminal Finish :
- TIN SILVER COPPER
- Number of Terminations :
- 12
- Number of Pins :
- 1
- Rds On (Max) @ Id, Vgs :
- 552m Ω @ 16A, 10V
- FET Feature :
- Standard
- Packaging :
- Bulk
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Terminal Position :
- UPPER
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Terminal Form :
- UNSPECIFIED
- Published :
- 2007
- Max Power Dissipation :
- 357W
- Continuous Drain Current (ID) :
- 19A
- Power Dissipation :
- 357W
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- Case Connection :
- Isolated
- Mounting Type :
- Chassis Mount
- JESD-609 Code :
- e1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- APTM100A46FT1G
APTM100A46FT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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