APTM100A46FT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

357W

Transistor Application :

SWITCHING

FET Feature :

Standard

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Number of Elements :

2

Operating Temperature :

-40°C~150°C TJ

JESD-609 Code :

e1

Package / Case :

SP1

Terminal Form :

UNSPECIFIED

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Half Bridge)

Packaging :

Bulk

Qualification Status :

Not Qualified

Pin Count :

12

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Number of Pins :

1

Number of Terminations :

12

Published :

2007

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

552m Ω @ 16A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

1000V 1kV

Transistor Element Material :

SILICON

Mount :

Chassis Mount, Screw

Reach Compliance Code :

Unknown

Continuous Drain Current (ID) :

19A

Max Power Dissipation :

357W

Terminal Finish :

TIN SILVER COPPER