APTM100A46FT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

UPPER

Published :

2007

Package / Case :

SP1

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

1000V 1kV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

Standard

Pin Count :

12

Max Power Dissipation :

357W

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Power Dissipation :

357W

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Terminal Finish :

TIN SILVER COPPER

FET Type :

2 N-Channel (Half Bridge)

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Number of Terminations :

12

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

Isolated

Mount :

Chassis Mount, Screw

Number of Pins :

1

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Chassis Mount

Number of Elements :

2

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Rds On (Max) @ Id, Vgs :

552m Ω @ 16A, 10V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

19A

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

RoHS Compliant

Operating Temperature :

-40°C~150°C TJ

Reach Compliance Code :

Unknown

Terminal Form :

UNSPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED