APTM100A13DG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

UPPER

Published :

1999

Fall Time (Typ) :

24 ns

Drain to Source Voltage (Vdss) :

1000V 1kV

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

4

Rds On (Max) @ Id, Vgs :

156m Ω @ 32.5A, 10V

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

5V @ 6mA

Terminal Form :

UNSPECIFIED

Factory Lead Time :

36 Weeks

Mounting Type :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

6

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

FET Feature :

Standard

RoHS Status :

RoHS Compliant

Package / Case :

SP6

Power Dissipation :

1.25kW

FET Type :

2 N-Channel (Half Bridge)

Avalanche Energy Rating (Eas) :

1300 mJ

Rise Time :

9ns

Case Connection :

Isolated

Terminal Finish :

TIN SILVER COPPER

DS Breakdown Voltage-Min :

1000V

Max Power Dissipation :

1.25kW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Mount :

Chassis Mount, Screw

Power - Max :

1250W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

50 ns

Input Capacitance (Ciss) (Max) @ Vds :

15200pF @ 25V

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

562nC @ 10V

Pbfree Code :

yes

Pin Count :

4

Turn On Delay Time :

9 ns

JESD-30 Code :

R-XUFM-X4

Packaging :

Bulk

ECCN Code :

EAR99

Continuous Drain Current (ID) :

65A

Number of Elements :

2