APTM100A13SCG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.25kW

Avalanche Energy Rating (Eas) :

1300 mJ

JESD-609 Code :

e1

Packaging :

Bulk

Power Dissipation :

1.25kW

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Mount :

Chassis Mount, Screw

Fall Time (Typ) :

24 ns

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 6mA

JESD-30 Code :

R-XUFM-X7

Number of Terminations :

7

Package / Case :

SP6

FET Feature :

Standard

Pin Count :

7

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

156m Ω @ 32.5A, 10V

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Chassis Mount

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Turn On Delay Time :

9 ns

Drain to Source Voltage (Vdss) :

1000V 1kV

Number of Elements :

2

Case Connection :

Isolated

DS Breakdown Voltage-Min :

1000V

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

15200pF @ 25V

Turn-Off Delay Time :

50 ns

Transistor Application :

SWITCHING

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

FET Type :

2 N-Channel (Half Bridge)

Power - Max :

1250W

Gate to Source Voltage (Vgs) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

562nC @ 10V

Continuous Drain Current (ID) :

65A

Terminal Position :

UPPER

Number of Pins :

6

Terminal Form :

UNSPECIFIED