APTM100A23STG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

1000V 1kV

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

AVALANCHE RATED

Package / Case :

SP4

Pin Count :

10

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 5mA

RoHS Status :

RoHS Compliant

Number of Elements :

2

Number of Terminations :

10

Published :

1999

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN SILVER COPPER

Fall Time (Typ) :

35 ns

Continuous Drain Current (ID) :

36A

Pbfree Code :

yes

Max Power Dissipation :

694W

JESD-609 Code :

e1

Mounting Type :

Chassis Mount

Turn On Delay Time :

10 ns

FET Type :

2 N-Channel (Half Bridge)

Radiation Hardening :

No

FET Feature :

Standard

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

270m Ω @ 18A, 10V

Rise Time :

12ns

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

Turn-Off Delay Time :

121 ns

Power Dissipation :

694W

JESD-30 Code :

R-XUFM-X10

DS Breakdown Voltage-Min :

1000V

Gate Charge (Qg) (Max) @ Vgs :

308nC @ 10V

Terminal Position :

UPPER

Operating Mode :

ENHANCEMENT MODE

Mount :

Chassis Mount, Screw

Factory Lead Time :

36 Weeks

Case Connection :

Isolated

Number of Pins :

4

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING