APTM100A23SCTG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

5V @ 5mA

Max Power Dissipation :

694W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Power Dissipation :

694W

FET Feature :

Silicon Carbide (SiC)

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

308nC @ 10V

Package / Case :

SP4

Continuous Drain Current (ID) :

36A

Mount :

Chassis Mount, Screw

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

DS Breakdown Voltage-Min :

1000V

Terminal Form :

UNSPECIFIED

JESD-30 Code :

R-XUFM-X10

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

UPPER

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

1000V 1kV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

TIN SILVER COPPER

Operating Temperature :

-40°C~150°C TJ

JESD-609 Code :

e1

Rds On (Max) @ Id, Vgs :

270m Ω @ 18A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Mounting Type :

Chassis Mount

Packaging :

Bulk

Reach Compliance Code :

Unknown

Published :

1997

Number of Terminations :

10

FET Type :

2 N-Channel (Half Bridge)