APTM50HM75FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Terminal Finish :

TIN SILVER COPPER

Drain-source On Resistance-Max :

0.09Ohm

Max Power Dissipation :

357W

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

COMPLEX

Factory Lead Time :

36 Weeks

Turn On Delay Time :

18 ns

Turn-Off Delay Time :

87 ns

JESD-30 Code :

R-XUFM-X25

DS Breakdown Voltage-Min :

500V

Terminal Position :

UPPER

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

46A

Drain to Source Voltage (Vdss) :

500V

JESD-609 Code :

e1

Published :

2006

ECCN Code :

EAR99

Package / Case :

SP3

Mounting Type :

Chassis Mount

RoHS Status :

RoHS Compliant

FET Type :

4 N-Channel (H-Bridge)

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

90m Ω @ 23A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Pin Count :

25

Packaging :

Bulk

Mount :

Chassis Mount, Screw

Operating Temperature :

-40°C~150°C TJ

Fall Time (Typ) :

77 ns

Case Connection :

Isolated

Power Dissipation :

357W

Transistor Application :

SWITCHING

Number of Elements :

4

Gate to Source Voltage (Vgs) :

30V

Terminal Form :

UNSPECIFIED

Additional Feature :

AVALANCHE RATED

FET Feature :

Standard

Rise Time :

35ns

Pbfree Code :

yes

Number of Terminations :

25

Avalanche Energy Rating (Eas) :

2500 mJ

Radiation Hardening :

No