APTM50HM38FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SP6

ECCN Code :

EAR99

Number of Terminations :

12

Fall Time (Typ) :

77 ns

Radiation Hardening :

No

Max Power Dissipation :

694W

Power Dissipation :

694W

Mounting Type :

Chassis Mount

Factory Lead Time :

36 Weeks

Rise Time :

35ns

JESD-30 Code :

R-XUFM-X12

Number of Elements :

4

FET Type :

4 N-Channel (H-Bridge)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

Additional Feature :

AVALANCHE RATED

Packaging :

Bulk

Turn On Delay Time :

18 ns

Continuous Drain Current (ID) :

90A

Operating Mode :

ENHANCEMENT MODE

Pin Count :

12

Avalanche Energy Rating (Eas) :

2500 mJ

Turn-Off Delay Time :

87 ns

Mount :

Chassis Mount, Screw

Operating Temperature :

-40°C~150°C TJ

DS Breakdown Voltage-Min :

500V

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

FET Feature :

Standard

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 5mA

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

Drain to Source Voltage (Vdss) :

500V

Number of Pins :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

TIN SILVER COPPER

JESD-609 Code :

e1