APTM50HM35FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

99A

FET Type :

4 N-Channel (H-Bridge)

Terminal Finish :

TIN SILVER COPPER

Vgs(th) (Max) @ Id :

5V @ 5mA

Mount :

Chassis Mount, Screw

Power Dissipation :

781W

Terminal Form :

UNSPECIFIED

Avalanche Energy Rating (Eas) :

3000 mJ

Turn-Off Delay Time :

75 ns

Terminal Position :

UPPER

FET Feature :

Standard

Case Connection :

Isolated

Published :

2006

Drain to Source Voltage (Vdss) :

500V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

38ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SP6

Turn On Delay Time :

21 ns

Transistor Element Material :

SILICON

Pin Count :

12

Number of Terminations :

12

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

DS Breakdown Voltage-Min :

500V

Max Power Dissipation :

781W

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

39m Ω @ 49.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Drain-source On Resistance-Max :

0.039Ohm

Mounting Type :

Chassis Mount

Radiation Hardening :

No

Number of Pins :

6

Operating Temperature :

-40°C~150°C TJ

Factory Lead Time :

36 Weeks

JESD-30 Code :

R-XUFM-X12

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Fall Time (Typ) :

93 ns

Transistor Application :

SWITCHING

Number of Elements :

4