APTM50DHM35G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Case Connection :

Isolated

Rise Time :

38ns

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual) Asymmetrical

Drain-source On Resistance-Max :

0.039Ohm

Avalanche Energy Rating (Eas) :

3000 mJ

Fall Time (Typ) :

93 ns

Turn On Delay Time :

21 ns

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Chassis Mount, Screw

Max Power Dissipation :

781W

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Pin Count :

8

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-XUFM-X8

Packaging :

Bulk

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

5V @ 5mA

DS Breakdown Voltage-Min :

500V

Published :

2006

Turn-Off Delay Time :

75 ns

Rds On (Max) @ Id, Vgs :

39m Ω @ 49.5A, 10V

Number of Pins :

6

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

Package / Case :

SP6

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Mounting Type :

Chassis Mount

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Continuous Drain Current (ID) :

99A

FET Feature :

Standard

Power Dissipation :

781W

Drain to Source Voltage (Vdss) :

500V

Additional Feature :

AVALANCHE RATED