APTM50AM38SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

35ns

Number of Pins :

4

RoHS Status :

RoHS Compliant

JESD-609 Code :

e1

Radiation Hardening :

No

Continuous Drain Current (ID) :

90A

Max Power Dissipation :

694W

Pulsed Drain Current-Max (IDM) :

360A

Operating Temperature :

-40°C~150°C TJ

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

Mounting Type :

Chassis Mount

Turn On Delay Time :

18 ns

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

500V

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

Drain-source On Resistance-Max :

0.038Ohm

Terminal Finish :

TIN SILVER COPPER

Number of Elements :

2

Pin Count :

10

Mount :

Chassis Mount, Screw

Drain to Source Voltage (Vdss) :

500V

FET Type :

2 N-Channel (Half Bridge)

JESD-30 Code :

R-XUFM-X10

Number of Terminations :

10

Power Dissipation :

694W

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

FET Feature :

Silicon Carbide (SiC)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 5mA

Fall Time (Typ) :

77 ns

Turn-Off Delay Time :

87 ns

Package / Case :

SP4

Additional Feature :

AVALANCHE RATED

Published :

1997

Factory Lead Time :

36 Weeks

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Terminal Form :

UNSPECIFIED

Terminal Position :

UPPER

FET Technology :

METAL-OXIDE SEMICONDUCTOR