APTM50AM38FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

35ns

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

246nC @ 10V

Mounting Type :

Chassis Mount

Factory Lead Time :

36 Weeks

Drain-source On Resistance-Max :

0.038Ohm

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 5mA

Fall Time (Typ) :

77 ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

45m Ω @ 45A, 10V

Drain to Source Voltage (Vdss) :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

694W

Mount :

Chassis Mount, Screw

Pbfree Code :

yes

Operating Temperature :

-40°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

360A

FET Feature :

Standard

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Turn On Delay Time :

18 ns

Number of Pins :

4

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 25V

Package / Case :

SP4

Continuous Drain Current (ID) :

90A

Packaging :

Bulk

FET Type :

2 N-Channel (Half Bridge)

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

500V

Terminal Position :

UPPER

Pin Count :

12

Turn-Off Delay Time :

87 ns

Number of Elements :

2

Transistor Application :

SWITCHING

Radiation Hardening :

No

Terminal Finish :

TIN SILVER COPPER

Number of Terminations :

12

Terminal Form :

UNSPECIFIED

Series :

POWER MOS 7®

Power Dissipation :

694W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99